SDK to Expand Capacity for High-Grade SiC Epitaxial Wafer
14 Septembre 2017 - 8:00AM
JCN Newswire (English)
Showa Denko ("SDK"; TSE:4004) will increase manufacturing
capacity for its high-quality-grade silicon carbide (SiC) epitaxial
wafer for power devices from the current 3,000 to 5,000 wafers per
month[1]. Presently on the market under the trade-name "High-Grade
Epi" (HGE), the expanded facility will become operational in April
2018.
SiC-based power devices can operate in high-temperature,
high-voltage and high-current conditions while substantially
conserving energy, and enable smaller, lighter and more
energy-efficient next-generation power control modules. SiC power
devices are used as power sources for servers in data centers and
in distributed power supply systems for new energies, while use in
inverter modules for railcars and quick charging stations for
electric vehicles has increased. The SiC power device market is
expected to grow at an annual rate of 27% by 2020[2].
Power modules for high-voltage, high-current applications mainly
contain devices with the structure of SBD (Schottky Barrier Diode)
and transistors with the structure of MOSFET
(Metal-Oxide-Semiconductor Filed-Effect Transistor)[3]. While
manufacturers go into mass production of SiC-SBD, practical
application of SiC-MOSFET required further reduction in various
types of surface and crystal defects.
In HGE by SDK, the number of basal plane dislocation (BPD), a
typical crystal defect, is controlled within 0.1/cm2 [4]. Since its
release in October 2015, HGE has been used as a key component in
SiC-SBD, and is increasingly used by device manufacturers in
SiC-MOSFET. SDK is expanding its HGE production capacity as
facilities are fully operational at present and we expect a
stronger market for SiC-MOSFET in 2018 and beyond.
The size of the market for SiC epitaxial wafers for power devices
is expected to reach 20 billion yen in 2020[5]. SDK will continue
to meet demand in the market for high-quality SiC epitaxial wafer,
aiming to contribute to improvement in the energy efficiency of
power devices.
[1] Based on a conversion into SiC epitaxial wafers for power
devices having withstanding voltage of 1,200 V.
[2] "Reality and Future Prospect of Next Generation Power Device
and Power Electronics Related Apparatus Market 2017," published by
Fuji Keizai Co., Ltd.
[3] MOSFET - metal oxide semiconductor field effect transistor:
MOSFET is good to be used in logic circuits that require high-speed
switching, because its rate of power loss is small.
[4] Basal plane dislocation: Dislocation that occurs on a basal
plane of a single crystal SiC.
[5] Estimated by SDK.
About Showa Denko K.K.
Showa Denko K.K. ("SDK"; TSE:4004, US:SHWDF) is a major
manufacturer and marketer of chemical products serving a wide range
of fields ranging from heavy industry to the electronic and
computer industries. The Petrochemicals Sector provides cracker
products such as ethylene and propylene, the Chemicals Sector
provides industrial and high-performance gases and chemicals and
high-purity gases and chemicals for the semiconductor industry, and
the Inorganics Sector provides ceramics products such as alumina,
abrasive, refractory and graphite electrodes and fine carbon
products. Today, the Aluminum Sector provides aluminum materials
and high-value-added fabricated aluminum, the Electronics Sector
provides HD media, compound semiconductors such as ultra
high-bright LEDs and rare earth magnetic alloys, and the Advanced
Battery Materials Department (ABM) provides lithium-ion battery
components. For more information, please visit
www.sdk.co.jp/english/.
Source: Showa Denko K.K.
Contact:
Public Relations Office
Phone: +81-3-5470-3235
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