Peregrine Semiconductor Unveils STeP8 UltraCMOS® Process Technology
25 Février 2013 - 9:05AM
Business Wire
Peregrine Semiconductor Corporation (NASDAQ:
PSMI), a fabless provider of high-performance radio frequency
integrated circuits (RFICs), today announced from Mobile World
Congress in Barcelona the latest version of
UltraCMOS® process technology—Semiconductor
Technology Platform 8 (STeP8). STeP8 technology shows a 36%
improvement in RonCoff performance over STeP5 technology announced
just one year ago—dramatically improving the linearity, insertion
loss, and isolation capabilities of Peregrine’s RFIC products.
Flagship devices utilizing the latest generation of the UltraCMOS
technology include a HaRP™ enhanced SP16T RF switch and a
highly integrated SP4T DuNE™ enhanced antenna-tuning switch,
both of which are available for sampling. The initial STeP8-based
SP16T RF switch demonstrates a nearly 40% shrink over the
industry-leading footprint of the STeP-5-based counterpart.* The
SP4T antenna-tuning switch has on-resistance of 1.5 Ohms, and
insertion loss performance of 0.15 dB matched at 900 MHz—a 66%
improvement over the previous offering from Peregrine.*
“As a fabless semiconductor company, our unique combination of
process architecture, circuit designs, and device modeling has
enabled an accelerated technology roadmap,” said Mark Miscione,
vice president of RF Technology Solutions for Peregrine
Semiconductor. “These results further validate Peregrine’s
expertise in advanced RF silicon-on-insulator process development
and its commitment to integration and high-performance at the RF
Front End.”
The 4G LTE network has introduced significant challenges to the
RF Front End of smart phones, including a fragmented RF spectrum,
which causes co-existence issues between bands and other
connectivity standards such as GPS, WiFi®, and Bluetooth®. The lack
of global frequency alignment has resulted in more than 40 LTE
bands now identified.
“Given the demanding RF conditions in which mobile devices must
operate, demonstrating the ability to meet next generation
requirements for high linearity, low loss and optimization is
critical for success in the RF components market,” said Francis
Sideco, senior principal analyst, consumer electronics and
communications technologies at IHS. “Companies who are able
to deliver innovation along those lines are strongly positioned to
outpace their competitors.”
To ensure consistent, reliable operation within the LTE
environment, mobile wireless device designers are required to
incorporate high performance components into the RF Front End while
maintaining a small form factor. Highly-integrated RF Front End
modules such as those that UltraCMOS STeP8 enables address these
demands by providing an ideal combination of high linearity and low
insertion loss in a single, monolithically-integrated device.
“Peregrine continues to be the right choice when we look for RF
innovation for the RF Front-End modules we deliver to our demanding
global OEMs,” said Norio Nakajima, vice president of the
communication business unit at MuRata Manufacturing Co.,
Ltd. “Their ability to engineer leading-edge technology like
STeP8, and rapidly adjust to market dynamics, makes them our ideal
partner.”
Peregrine is sampling the STeP8-based SP16T RF switch and SP4T
antenna-tuning switch to select customers today; further interest
should be directed to Peregrine’s global direct sales
management. For more information, visit
http://www.psemi.com.
About Peregrine Semiconductor
Peregrine Semiconductor (NASDAQ: PSMI) is a
fabless provider of high-performance radio frequency integrated
circuits (RFICs). Our solutions leverage our
proprietary UltraCMOS® technology,
an advanced RF Silicon-On-Insulator process. Our products deliver
what we believe is an industry-leading combination of performance
and monolithic integration, and target a broad range of
applications in the aerospace and defense, broadband, industrial,
mobile wireless device, test and measurement equipment, and
wireless infrastructure markets. Additional information is
available on the Company’s website
at http://www.psemi.com.
The Peregrine Semiconductor name, logo, and
UltraCMOS are registered trademarks, and DuNE, and HaRP are
trademarks of Peregrine Semiconductor Corporation in the U.S.A.,
and other countries. All other trademarks mentioned herein are the
property of their respective owners.
Tags/Keywords: silicon-on-sapphire technology,
silicon-on-insulator, UltraCMOS, antenna
tuning, 4G LTE, smartphone, semiconductor
technology process, compound semiconductor
technology
*Based upon Peregrine Semiconductor-supplied data.
(MM) (NASDAQ:PSMI)
Graphique Historique de l'Action
De Juil 2024 à Août 2024
(MM) (NASDAQ:PSMI)
Graphique Historique de l'Action
De Août 2023 à Août 2024