Media Alert: Atomera to Present Joint Paper with Soitec and San Jose State University on Advanced RF Technologies at 8th IEEE Electronic Devices Technology and Manufacturing (EDTM) Conference 2024
22 Février 2024 - 11:05PM
Business Wire
Atomera Incorporated (Nasdaq: ATOM):
WHO:
Hideki Takeuchi, Vice President of
Engineering of Atomera Incorporated (Nasdaq: ATOM), a semiconductor
materials and technology licensing company
WHAT:
In-person presentation of Atomera’s,
Soitec’s and San Jose State University’s joint paper, entitled
“SSROI (super-steep retrograde on insulator) substrates for RF
switch and LNA device performance enhancement”
WHEN:
Tuesday, March 5, 3:00 p.m.-3:15 p.m. IST
(1:30 a.m.-1:45 a.m. PST)
WHERE:
Hilton and Hilton Garden Inn Bengaluru
Embassy Manyata Business Park, Room 5H
Hebbal Outer Ring Road, Nagawara,
Bangalore 560 045, India
Atomera Incorporated will present a joint paper, coauthored by
Soitec and San Jose State University (Prof. Hiu-Yung Wong), to
propose a novel RF-SOI (silicon on insulator) substrate for RF
switch and LNA device performance enhancement. Rapid out-diffusion
of boron from the SOI layer into BOX (buried oxide) layer has been
observed for regular RF-SOI substrates. It will be shown that the
OI (oxygen insertion)-Si layer and the subsequent undoped Si layer
epitaxially grown on a thin SOI starting substrate effectively
retain boron in the SOI layer to enable formation of a SSR
(super-steep retrograde) channel profile in a regular CMOS flow.
The new SSROI substrate reduces body resistance for power handling
improvement of RF switch devices, in addition to reducing the
surface channel doping and thus impurity scattering for cutoff
frequency improvement of LNA (low noise amplifier) devices. The
benefits of SSROI substrate will be demonstrated via >20%
improvement in Rdson at the same DC-breakdown from experimental
data as well as extension of SOI thickness and gate length scaling
from 3D-TCAD simulation data for RF switch devices and via >50%
gm (trans-conductance) improvement from TCAD simulation data for
LNA devices.
Atomera’s RF-optimized Mears Silicon Technology (MST) is
epitaxially deposited onto ultra-thin RF-SOI wafers, providing
improvements in critical RF switch characteristics for 5G Advanced
and 6G applications.
Follow Atomera:
Company website: https://atomera.com/
Atomera whitepapers: https://atomera.com/news-and-blogs/
Atomera blog: https://atomera.com/news-and-blogs/
LinkedIn: www.linkedin.com/company/atomera/
About Atomera
Atomera Incorporated, one of America’s top 100 Best Small
Companies in 2022 ranked by Forbes, is a semiconductor materials
and technology licensing company focused on deploying its
proprietary, silicon-proven technology into the semiconductor
industry. Atomera has developed Mears Silicon Technology™ (MST®),
which increases performance and power efficiency in semiconductor
transistors. MST can be implemented using equipment already
deployed in semiconductor manufacturing facilities and is
complementary to other nano-scaling technologies in the
semiconductor. More information can be found at
www.atomera.com.
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version on businesswire.com: https://www.businesswire.com/news/home/20240222252927/en/
Justin Gillespie The Hoffman Agency t: (925) 719-1097
jgillespie@hoffman.com
Jeff Lewis Senior Vice President, Business Development and
Marketing, Atomera t: (408) 442-5248 jlewis@atomera.com
Atomera (NASDAQ:ATOM)
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