REDONDO BEACH, Calif.,
May 28, 2014 /PRNewswire/ -- A
pioneer in the design and fabrication of advanced semiconductors,
Northrop Grumman Corporation (NYSE: NOC) has developed two high
performance Monolithic Microwave Integrated Circuit (MMIC)
broadband ultra-low-noise amplifiers (LNA) that are in production
for immediate delivery.
The cost-effective indium phosphide (InP) high electron mobility
transistor (HEMT) LNAs are for use in E-band and W-band commercial,
civil and military applications such as communication links,
sensors, millimeter-wave imaging, radars and digital microwave
radios.
The compact die design of each LNA considerably reduces
footprint size and exhibits unmatched ultra-low-noise performance
and high gain.
"The LNAs are the initial release of products designed with the
company's indium phosphide process, a powerful semiconductor
technology that has successfully been used in Northrop Grumman's
advanced military communication systems," said Frank Kropschot, general manager,
Microelectronics Products and Services at Northrop Grumman. "For
the first time, Northrop is offering products for similarly
demanding commercial applications."
Product descriptions:
ALP283:
- The ALP283 is a W-band 1.7 mm2 InP HEMT low-noise
amplifier that operates between 80 and 100 GHz
- The power amplifier provides 29 dB of linear gain, 2.5 dB
typical Noise Figure and 1dB gain compression power (P1dB) of 3 dBm
(2 mw)
- A 2 dB typical average noise figure from 80-100 GHz
- Excellent for W-Band millimeter-wave imaging applications,
sensors and communication links
ALP275:
- The ALP275 is W-band 2.125 mm2 InP HEMT
ultra-low-noise amplifier that operates between 71 and 96 GHz
- The power amplifier provides greater than 26 dB of linear gain,
3 dB typical Noise Figure and P1dB of 4 dBm (2.5 mw)
- Ideal for E-Band and W-Band communications links
To ensure rugged and reliable operation, both LNAs are fully
passivated. Both bond pad and backside metallization are Ti/Au,
which is compatible with conventional die attach, thermocompression
and thermosonic wire bonding assembly techniques.
Detailed datasheets on both LNAs can be found at
www.northropgrumman.com/mps
Northrop Grumman manufactures the LNAs at its state-of-the-art
microelectronics wafer fabrication facility in Manhattan Beach. A Department of Defense
Trusted Foundry, the facility uses advanced gallium nitride,
gallium arsenide and indium phosphide semiconductor manufacturing
processes.
Northrop Grumman is a leading global security company providing
innovative systems, products and solutions in unmanned systems,
cyber, C4ISR, and logistics and modernization to government and
commercial customers worldwide. Please visit
www.northropgrumman.com for more information.
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SOURCE Northrop Grumman Corporation